Calibration for the anodic oxidation of silicon
| Autor: | G. Tobolka, A. Baghai, E. Guerrero |
|---|---|
| Rok vydání: | 1981 |
| Předmět: |
inorganic chemicals
Materials science Silicon Anodic oxidation Inorganic chemistry technology industry and agriculture Metals and Alloys Oxide chemistry.chemical_element Surfaces and Interfaces Electrolyte equipment and supplies complex mixtures Surfaces Coatings and Films Electronic Optical and Magnetic Materials stomatognathic diseases chemistry.chemical_compound chemistry Materials Chemistry Calibration Layer (electronics) |
| Zdroj: | Thin Solid Films. 76:237-240 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/0040-6090(81)90693-3 |
| Popis: | In this paper we give experimental evidence that the thickness of a layer of silicon stripped by anodic oxidation is solely dependent on the anodically grown thickness of the oxide and is independent of the electrolyte and of other parameters of the experiment. A correlation is established between the thickness of a stripped layer of silicon and that of the oxide. This relation may be used to determine profiles in silicon by means of anodic oxidation. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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