The role of Cu distribution and Al2Cu precipitation on the electromigration reliability of submicrometer Al(Cu) lines
| Autor: | E. G. Colgan, K. P. Rodbell |
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| Rok vydání: | 1994 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 75:3423-3434 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | The microstructure and Cu distribution were determined for blanket and patterned Al(≤4 wt % Cu) thin films as a function of annealing. The growth of Θ‐phase (Al2Cu) precipitates in blanket and patterned submicrometer‐wide lines was quantified along with the Cu concentrations within the Al grains. The reliability of 0.5‐μm‐wide lines was found to be strongly influenced by the details of the annealing sequence; however, 1‐μm‐wide lines were less affected. The difference in the electromigration behavior of 0.5‐μm‐wide lines is shown to be due to the different film microstructures formed in the patterned lines as a function of annealing history. Specifically, the amount of Cu in the grains and the size and distribution of the Θ‐phase precipitates were found to be a strong function of both the annealing conditions and the linewidth in 0.5–1‐μm‐thick Al(Cu) films. |
| Databáze: | OpenAIRE |
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