New Class-F High Efficiency Multi-bias Optimised GaN HPA for C-band Applications
| Autor: | Frederic Ploneis, Lucas Mandica, Wilfried Demenitroux, Nicolas Berthou, Audrey Thorinius |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Power gain
Materials science C band Amplifier 020208 electrical & electronic engineering 020206 networking & telecommunications Gallium nitride 02 engineering and technology Power (physics) chemistry.chemical_compound Electricity generation chemistry 0202 electrical engineering electronic engineering information engineering Electronic engineering Electrical impedance Voltage |
| Zdroj: | 2018 48th European Microwave Conference (EuMC). |
| DOI: | 10.23919/eumc.2018.8541688 |
| Popis: | This paper describes a new design methodology for high power amplifier based on 0.25um GaN technology in C-band, with maximum efficiency over a wide range of output power. The main idea is to focus the design on matching the input and output impedance to have the better trade-off for high efficiency over a wide range of output power and frequency, by sweeping the drain voltage of the HPA. The measured HPA exhibits an average power-added efficiency (PAE) of 65% from 4.4 to 5.0 GHz with an output power of 10W and a power gain of 15dB at saturated power. This amplifier is able to be used in application which need reconfigurable output power from 0.5W to 10W with over 60% of PAE, or with Envelop Tracking architecture. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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