Oxygen Precipitation in MCZ Silicon: Behaviour and Dependence on the Origin of Raw Material and Growth Conditions

Autor:	T. M. Tkacheva, G. N. Petrov, K. L. Enisherlova, N. A. Iasamanov
Rok vydání:	1996
Předmět:	Oxygen precipitation Materials science Silicon chemistry Single crystal growth Impurity Metamorphic rock Metallurgy chemistry.chemical_element Raw material Quartz Hydrothermal circulation
Zdroj:	Early Stages of Oxygen Precipitation in Silicon ISBN: 9789401066457
Popis:	The demands of device producers for very low impurity content in Si, gives rise to a necessity to pay attention to the impurity concentration in the raw material. The analysis of impurity distribution in quartz of various genotypes shows that the most chemically pure quartz is the quartz from the veins formed as a result of hydrothermal processes and metamorphic treatments.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1ac2d7612309c45eafeddf96da742fdd https://doi.org/10.1007/978-94-009-0355-5_43 Zobrazit plný text záznamu