| Autor: |
Birte-Julia Godejohann, David Lackner, Bruno Boizot, Jeremie Lefevre, R. Lang, Jonas Schön, Frank Dimroth |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
2020 47th IEEE Photovoltaic Specialists Conference (PVSC). |
| DOI: |
10.1109/pvsc45281.2020.9300639 |
| Popis: |
As an answer to increased demand for more radiation tolerant solar cells for space applications, we investigate the dependence of radiation hardness of III-V compounds on composition of InGaAsP. Four solar cells with different composition were grown on InP and metamorphically on GaAs and irradiated with 1 MeV electrons. A simulation-based analysis was used to determine the material specific irradiation damage. In addition, the regeneration ability is investigated under typical operating conditions (60 °C and AM0 illumination) and under the ECSS standard. While a clear decrease in radiation damage compared to GaAs is observed in all samples, the effect is stronger with increasing InP-fraction. The irradiation induced defect recombination coefficient can be described with a linear function of InP-fraction. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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