Self-shielded high voltage SOI structures for HVICs

Autor:	P. Rossel, Nicolas Nolhier, D. Zerrouk, G. Charitat
Rok vydání:	2002
Předmět:	Engineering business.industry Electrical engineering Silicon on insulator High voltage Hardware_PERFORMANCEANDRELIABILITY Isolation amplifier law.invention Capacitor Hardware_GENERAL law Hardware_INTEGRATEDCIRCUITS Breakdown voltage Power semiconductor device business Low voltage Electronic circuit
Zdroj:	1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings.
DOI:	10.1109/smicnd.1996.557368
Popis:	We report in this paper a numerical study on an electrical isolation scheme for High Voltage Integrated Circuits (HVICs). The presented architecture is based on mixed-isolation technique including a vertical dielectric isolation along with an horizontal junction isolation. The aim of this work is the integration on the same substrate of power devices with low voltage control circuits. This isolation technique must be efficient in both static and dynamic mode, in order to compete with a costly full dielectric isolation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1aada8829ce9db1fcd9437d2d457a9bf https://doi.org/10.1109/smicnd.1996.557368 Zobrazit plný text záznamu