Concentration profiles of antimony-doped shallow layers in silicon
| Autor: | Talal H. Alzanki, Russell M. Gwilliam, Chris Jeynes, N.G. Emerson, B.J. Sealy, Z. Tabatabaian |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Silicon
Annealing (metallurgy) Doping Analytical chemistry chemistry.chemical_element Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Antimony Electrical resistivity and conductivity Hall effect Shallow junction Materials Chemistry Electrical and Electronic Engineering Sheet resistance |
| Zdroj: | Semiconductor Science and Technology. 19:728-732 |
| ISSN: | 1361-6641 0268-1242 |
| Popis: | Antimony implants at 40 keV and at a dose of 4 × 1014 cm−2 have been characterized for their potential use in n-type shallow junction formation. The electrical characterization was done using sheet resistivity and Hall effect measurements. High electrical activities (>80%) and low sheet resistance values ( |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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