Arsenic δ-doped HgTe∕HgCdTe superlattices grown by molecular beam epitaxy

Autor: Jarek Antoszewski, John Dell, Charles Musca, Gordon Tsen, C. R. Becker, Lorenzo Faraone
Rok vydání: 2008
Předmět:
Zdroj: Applied Physics Letters. 92:082107
ISSN: 1077-3118
0003-6951
DOI: 10.1063/1.2888967
Popis: Arsenic incorporation in HgTe∕Hg0.05Cd0.95Te superlattices grown by molecular beam epitaxy (MBE) is reported. The incorporation was carried out by a δ-doping approach where arsenic was incorporated during MBE growth as acceptors. The superlattices were characterized via high resolution x-ray diffraction, Fourier transform infrared spectroscopy, secondary ion mass spectrometry, and magnetotransport Hall measurements coupled with the quantitative mobility spectrum analysis algorithm.
Databáze: OpenAIRE