The Dependence of the Magnetic Properties of GaMnN on Codoping by Mg and Si
Autor: | Nadia A. El-Masry, Salah M. Bedair, M. Oliver Luen, M. J. Reed, F. E. Arkun, John Zavada, E. A. Berkman, M. L. Reed |
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Rok vydání: | 2004 |
Předmět: |
Materials science
Fermi level position Condensed matter physics Dopant Computer Science::Information Retrieval Fermi level Material system Chemical vapor deposition Condensed Matter::Materials Science Paramagnetism symbols.namesake Ferromagnetism symbols Condensed Matter::Strongly Correlated Electrons Electronic band structure |
Zdroj: | MRS Proceedings. 834 |
ISSN: | 1946-4274 0272-9172 |
DOI: | 10.1557/proc-834-j7.2 |
Popis: | The magnetic properties of GaMnN, grown by metalorganic chemical vapor deposition, depend on the addition of dopants; where undoped materials are ferromagnetic, and n -type (Si-doped) and p -type (Mg-doped) films are either ferromagnetic or paramagnetic depending on dopant concentration. The ferromagnetism of this material system seems correlated to Fermi level position, and is observed only when the Fermi level is within or close to the Mn energy band. This allows ferromagnetism-mediating carriers to be present in the Mn energy band. The current results exclude precipitates or clusters as the origin of room temperature ferromagnetism in GaMnN. |
Databáze: | OpenAIRE |
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