Simulation Study on Reproducing Resistive Switching Effect by Soret and Fick Diffusion in Resistive Random Access Memory
| Autor: | Ryosuke Koishi, Hidetoshi Miyashita, Takumi Moriyama, Kentaro Kinoshita, Satoru Kishida, Kouki Kawano, Sang-Seok Lee |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Mechanical Engineering Isotropy 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Resistive random-access memory Switching time Mechanics of Materials Rise time Electric field 0103 physical sciences Electrode Waveform General Materials Science Diffusion (business) 0210 nano-technology |
| Zdroj: | MRS Advances. 1:3373-3378 |
| ISSN: | 2059-8521 |
| DOI: | 10.1557/adv.2016.449 |
| Popis: | It is widely received that resistive switching in electrode (EL)/metal oxide (MO)/EL cell is caused by formation and rupture of a conductive filament (CF) consisting of oxygen vacancies, V O ’s. However, driving forces that migrate V O ’s are not elucidated yet. Considering an experimental fact that good data endurance more than 10 6 cycles is often observed, an isotropic driving force that gathers oxygen vacancies and form a CF for set switching is required instead of an electric field drift that is widely received as the driving force of set switching. In this paper, we reexamined driving forces and succeeded in reproducing pulse response data for wide rise time, t rise , range by simulating V O migration assuming Fick and Soret diffusion, without including the electric-field drift. Therefore, it was suggested that controlling T distribution considering the waveforms of write/erase pulses and the thermodynamic parameters of ELs as well as MO is crucial for the optimization of switching speed of ReRAM. |
| Databáze: | OpenAIRE |
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