| Autor: |
K J Harmon, N Delegan, M J Highland, H He, P Zapol, F J Heremans, S O Hruszkewycz |
| Rok vydání: |
2022 |
| Zdroj: |
Materials for Quantum Technology. 2:023001 |
| ISSN: |
2633-4356 |
| DOI: |
10.1088/2633-4356/ac6b76 |
| Popis: |
Silicon carbide (SiC) can be synthesized in a number of different structural forms known as polytypes with a vast array of optically active point defects of interest for quantum information sciences. The ability to control and vary the polytypes during SiC synthesis may offer a powerful methodology for the formation of new material architectures that expand our ability to manipulate these defects, including extending coherence lifetimes and enhancing room temperature operation. Polytypic control during synthesis presents a significant challenge given the extreme conditions under which SiC is typically grown and the number of factors that can influence polytype selection. In situ monitoring of the synthesis process could significantly expand our ability to formulate novel polytype structures. In this perspective, we outline the state of the art and ongoing challenges for precision synthesis in SiC. We discuss available in situ x-ray characterization methods that will be instrumental in understanding the atomic scale growth of SiC and defect formation mechanisms. We highlight optimistic use cases for SiC heterostructures that will become possible with in situ polytypic control and end by discussing extended opportunities for integration of ultrahigh quality SiC materials with other semiconductor and quantum materials. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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