New rectifying semiconductor structure by molecular beam epitaxy

Autor:	Arthur C. Gossard, C. L. Allyn, W. Wiegmann
Rok vydání:	1980
Předmět:	Materials science Physics and Astronomy (miscellaneous) Rectification Semiconductor structure business.industry Doping Rectangular potential barrier Optoelectronics Crystal growth Electric potential business Epitaxy Molecular beam epitaxy
Zdroj:	Applied Physics Letters. 36:373-376
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.91492
Popis:	A new unipolar rectifying semiconductor structure is demonstrated. Rectification is produced by an asymmetric potential barrier created by an MBE‐grown sawtooth‐shaped composition wave of AlxGa1−xAs between layers of n‐type GaAs. Single and multiple barriers as well as doped and undoped barriers have been studied and showed rectification. This is the first structure in which rectification has been produced directly by compositional grading.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1a82aef7cd6dfd6e7490f73136e39f94 https://doi.org/10.1063/1.91492 Zobrazit plný text záznamu