Short time electron cyclotron resonance hydrogenation of polycrystalline silicon thin‐film transistor structures
| Autor: | R. A. Ditizio, B.‐C. Hseih, S. J. Fonash, G. Liu, D. W. Greve |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
Physics and Astronomy (miscellaneous)
Silicon Passivation business.industry Transistor Analytical chemistry chemistry.chemical_element engineering.material equipment and supplies Electron cyclotron resonance Threshold voltage law.invention Polycrystalline silicon chemistry law Thin-film transistor engineering Optoelectronics Thin film business |
| Zdroj: | Applied Physics Letters. 56:1140-1142 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.102543 |
| Popis: | Electron cyclotron resonance plasmas have been used to produce the most effective, shortest time plasma hydrogenation of thin‐film polycrystalline silicon transistors yet reported. We demonstrate that significant improvement in device characteristics can be achieved with these plasmas using exposure times of the order of only 1 min and that 5 min exposures give saturated characteristics of a 2 V threshold voltage, a 65 cm2/V s mobility, and a 107 on/off ratio. We also explore the pressure and power level dependence of this passivation, as well as the effects of shielding with a grid, and show that the more efficient and more stable electron cyclotron resonance hydrogen exposures are at lower pressures. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|