Impact of TiN post-treatment on metal insulator metal capacitor performances
| Autor: | M. Proust, J-P. Manceau, Philippe Delpech, Raphael Clerc, A. Bajolet, Nicolas Gaillard, Gerard Ghibaudo, Sylvie Bruyere, Laurent Montès, J-C. Giraudin |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
chemistry.chemical_element Insulator (electricity) Chemical vapor deposition Dielectric Condensed Matter Physics Capacitance Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Capacitor chemistry law Electrode Electrical and Electronic Engineering Composite material Tin Leakage (electronics) |
| Zdroj: | Microelectronic Engineering. 83:2189-2194 |
| ISSN: | 0167-9317 |
| Popis: | When deposited by chemical vapor deposition (CVD), TiN layers must be post-treated with N"2/H"2 plasma. Metal-insulator-metal (MIM) capacitors using CVD-TiN as electrodes and Al"2O"3 as insulator are studied from both electrical and physico-chemical points of view. We verify that N"2/H"2 plasma is efficient concerning the TiN layers, while ensuring a low and uniform resistivity. However, the MIM capacitor figures of merit are impacted by the N"2/H"2 plasma, especially by the top electrode post-treatment. In particular, capacitance at 0V has been found to increase with TiN post-treatment, as well as the quadratic linearity coefficient. As for leakage currents, the top electrode densification induces non-standard mechanism and trapping phenomenon. Finally, the dielectric relaxation is also degraded when top electrode is post-treated. Electron energy loss spectroscopy (EELS) shows that the top electrode post-treatment is associated to Nitrogen diffusion, from the TiN top electrode into the alumina. Thus, chemical interactions between top electrode and alumina layer, induced by the top electrode post-treatment, may be at the origin of such behaviours. |
| Databáze: | OpenAIRE |
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