An angle-resolved photoelectron spectroscopy study of the electronic structures of Si(001)2×2-Al and -In surfaces
| Autor: | Yuji Takakuwa, T. Shimatani, M. Kimura, H.W. Yeom, Masakazu Nakamura, Tadashi Abukawa, Akito Kakizaki, Shozo Kono, Y. Mori |
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| Rok vydání: | 1996 |
| Předmět: |
Surface (mathematics)
Radiation Band gap Chemistry Dimer Synchrotron radiation Angle-resolved photoemission spectroscopy Electronic structure Condensed Matter Physics Atomic and Molecular Physics and Optics Symmetry (physics) Electronic Optical and Magnetic Materials chemistry.chemical_compound Crystallography X-ray photoelectron spectroscopy Physical and Theoretical Chemistry Spectroscopy |
| Zdroj: | Journal of Electron Spectroscopy and Related Phenomena. 80:177-180 |
| ISSN: | 0368-2048 |
| Popis: | Angle-resolved photoelectron spectroscopy (ARPES) using synchrotron radiation was employed to study the electronic structure of single-domain Si(001)2x2-Al and -In surfaces. Five different dispersing surface state bands, denoted as S 1 , S 2 , S′ 2 , S 3 and S′ 3 , are identified within bulk band gap with similar dispersions for both surfaces. From their dispersions and symmetry properties, the lowest-E B state S 1 is assigned as the surface state due to the dimer bond within the Al (In) dimer and S 2 , S′ 2 , S 3 and S′ 3 due to the back bonds between Al (In) and top-most Si atoms. This result also gives a corroborating evidence for the parallel dimer model of the surface structure. |
| Databáze: | OpenAIRE |
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