Aluminum nitride substrates for ultraviolet light-emitting diode structures

Autor:	T.Yu. Chemekova, Kh. Khelava, E. N. Mokhov, S. S. Nagalyuk, Yu.N. Makarov, O.V. Avdeev
Rok vydání:	2011
Předmět:	Materials science business.industry Surface roughness Ultraviolet light Optoelectronics Polishing Wafer Thin film Nitride business Epitaxy Surfaces Coatings and Films Diode
Zdroj:	Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 5:1136-1139
ISSN:	1819-7094 1027-4510
DOI:	10.1134/s1027451011120044
Popis:	Currently, wafers of aluminum nitride cut from bulk aluminum nitride crystals (AlN) grown by sublimation are considered promising substrates for obtaining light-emitting diode structures based on nitrides of the third group. In this study, the structural characteristics and electrical properties of AlN, as a prospective substrate material for light-emitting diode heterostructures based on AlGaN/GaN, were investigated. The substrate working surface ((0001) plane, Al-polar) was specifically prepared for epitaxial growth using chemical-mechanical polishing. The surface roughness (“epi-ready”), as estimated by atomic force microscopy, did not exceed 0.3 nm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1a0e3cd9304e3b57cca4fee0bbb11a0a https://doi.org/10.1134/s1027451011120044 Zobrazit plný text záznamu Full text from SpringerLink