Emerging GaN Power Devices for Efficient & Compact Power Conversion
| Autor: | Mohammed Agamy, Ramanujam Ramabhadran, Ahmed Elasser, Han Peng, Kum-Kang Huh, Jeffrey Joseph Nasadoski |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry 020208 electrical & electronic engineering chemistry.chemical_element Gallium nitride 02 engineering and technology Substrate (electronics) Converters 01 natural sciences Power (physics) Solar micro-inverter chemistry.chemical_compound chemistry 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Silicon carbide Optoelectronics Power semiconductor device business |
| Zdroj: | 2018 IEEE Energy Conversion Congress and Exposition (ECCE). |
| Popis: | While Silicon Carbide (SiC) power devices have dominated the wide bandgap landscape in the past 20 years, Gallium Nitride (GaN) power devices have also been the subject of numerous investigations and research work. Even though GaN lacks a bulk substrate, it can easily be grown on other substrates such as Silicon (Si). In this paper, extensive characterization of commercially available 100V to 650V GaN on Si power devices, using an extremely low inductance double pulse test circuit, are presented. The results and their impact on various industrial applications ranging from ultrasound power supplies, point of load (PoL) converters, microinverters, to hybrid electric vehicles' dc/dc converters are described. |
| Databáze: | OpenAIRE |
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