Patterned growth of single-walled carbon nanotubes on full 4-inch wafers
Autor: | Yiming Li, Ali Javey, Hongjie Dai, Robert Chen, Nathan R. Franklin |
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Rok vydání: | 2001 |
Předmět: | |
Zdroj: | Applied Physics Letters. 79:4571-4573 |
ISSN: | 1077-3118 0003-6951 |
Popis: | Patterned growth of single-walled carbon nanotubes (SWNTs) is achieved on full 4-in. SiO2/Si wafers. Catalytic islands with high uniformity over the entire wafer are obtained by a deep ultraviolet photolithography technique. Growth by chemical vapor deposition of methane is found to be very sensitive to the amount of H2 co-flow. Understanding of the chemistry enables the growth of high quality SWNTs from massive arrays (107–108) of well-defined surface sites. The scale up in patterned nanotube growth shall pave the way to large-scale molecular wire devices. |
Databáze: | OpenAIRE |
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