Monovalent and Divalent Impurity States in a Semiconductor Nanoplatelets
| Autor: | Vachagan V. Harutyunyan, Hayk A. Sarkisyan |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
chemistry.chemical_classification
Nanostructure Materials science Condensed matter physics Helium atom business.industry General Physics and Astronomy Perturbation (astronomy) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Divalent Parallelepiped chemistry.chemical_compound Variational method Semiconductor chemistry Impurity Condensed Matter::Strongly Correlated Electrons business |
| Zdroj: | Journal of Contemporary Physics (Armenian Academy of Sciences). 56:228-233 |
| ISSN: | 1934-9378 1068-3372 |
| DOI: | 10.3103/s1068337221030051 |
| Popis: | Hydrogen-like impurity states in a semiconductor nanoplatelets in the shape of a rectangular parallelepiped of small thickness are investigated within the framework of the variational method. It is shown that, due to the small thickness of the nanostructure, the impurity can be considered two-dimensional one. In the case of a divalent impurity, the electron-electron interaction is also considered two-dimensional and taken into account as a perturbation. By analogy with the theory of the helium atom, the energy of the electron-electron interaction for the para-state is determined. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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