Fabrication and Characterization of Coplanar Waveguides on Silicon Using a Combination of SiO$_{2}$ and SRO$_{20}$
| Autor: | M. del Carmen Maya-Sanchez, Ignacio E. Zaldivar-Huerta, R. Leal-Romero, J. A. Reynoso-Hernandez, M. Aceves-Mijares, J. E. Zuniga-Juarez |
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| Rok vydání: | 2008 |
| Předmět: |
Fabrication
Materials science Passivation Silicon business.industry chemistry.chemical_element Dielectric Chemical vapor deposition Electronic Optical and Magnetic Materials chemistry Attenuation coefficient Electronic engineering Optoelectronics Dielectric loss Electrical and Electronic Engineering business Layer (electronics) |
| Zdroj: | IEEE Transactions on Components and Packaging Technologies. 31:678-682 |
| ISSN: | 1557-9972 1521-3331 |
| DOI: | 10.1109/tcapt.2008.922005 |
| Popis: | In this work, the use of silicon rich oxide (SRO) and chemical vapor deposition SiO2 double layers as passivation films of coplanar waveguides (CPW) on high resistivity silicon (HR-Si) with an N+ backside is studied. The microwave performance of the fabricated CPWs is evaluated by computing the attenuation loss of the devices in the 0.045-50 GHz frequency range. Experimental results show that the N+ layer can be used without affecting CPW performance. Also, using a combined dielectric layer (SRO20 /SiO2 ), the attenuation losses are reduced compared to single dielectric layers. |
| Databáze: | OpenAIRE |
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