Influence of the Highly-Doped Drain Implantation and the Window Size on Defect Creation in p+/n Si1-XGex Source/Drain Junctions

Autor:	M. Kamruzzaman Chowdhury, B. Vissouvanadin, Mireia Bargallo Gonzalez, N. Bhouri, Peter Verheyen, H. Hikavyy, O. Richard, J. Geypen, H. Bender, Roger Loo, C. Claeys, Eddy Simoen, V. Machkaoutsan, P. Tomasini, S.G Thomas, J.P. Lu, J.W. Weijtmans, R. Wise
Rok vydání:	2007
DOI:	10.4028/3-908451-43-4.95
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::19c56e99951d79a816bc1951e059a08c https://doi.org/10.4028/3-908451-43-4.95 Zobrazit plný text záznamu