EELS and Ab-Initio Study of Faceted CSL Boundary in Silicon
| Autor: | Seiichi Watanabe, Heishichiro Takahashi, Makito Miyake, Norihito Sakaguchi |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Materials science
Silicon Band gap Mechanical Engineering Electron energy loss spectroscopy Fermi level Ab initio chemistry.chemical_element Condensed Matter Physics Molecular physics symbols.namesake chemistry Mechanics of Materials Atom symbols General Materials Science Grain boundary Atomic physics High-resolution transmission electron microscopy |
| Zdroj: | MATERIALS TRANSACTIONS. 52:276-279 |
| ISSN: | 1347-5320 1345-9678 |
| Popis: | Faceted 3 CSL grain boundaries in silicon were investigated by high-resolution transmission electron microscopy (HRTEM), electron energy-loss spectroscopy (EELS) and ab-initio calculation. A {112} 3 CSL boundary consisted of two segments which differed in atomic structure. The segment near the connected corner to {111} 3 CSL boundary showed symmetric structure and the other long segment, being distant region from the corner, showed asymmetric structure. In the symmetric segment a 5-fold coordinated atom presented, which produced a deep state in the band gap. A pronounced shoulder, which could be attributed to the defect state above Fermi level, was detected only in Si-L23 energy-loss near-edge spectra (ELNES) acquired from the symmetric segment of the {112} 3 CSL boundary near the CSL junction. [doi:10.2320/matertrans.MB201018] |
| Databáze: | OpenAIRE |
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