Radiation response of silicon carbide metal–oxide–semiconductor transistors in high dose region
Autor: | Shuichi Okubo, Takahiro Makino, Hiroshi Abe, Takeshi Ohshima, Mikio Kandori, Takuma Matsuda, Takashi Yokoseki, Toru Yoshie, Yuki Tanaka, Satoshi Mitomo, Yasuto Hijikata, Shinobu Onoda, Koichi Murata |
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Rok vydání: | 2015 |
Předmět: |
010302 applied physics
Materials science 010308 nuclear & particles physics Subthreshold conduction business.industry Transistor General Engineering General Physics and Astronomy 01 natural sciences Threshold voltage law.invention Metal chemistry.chemical_compound chemistry law visual_art 0103 physical sciences visual_art.visual_art_medium Silicon carbide Optoelectronics Field-effect transistor Irradiation business Voltage |
Zdroj: | Japanese Journal of Applied Physics. 55:01AD01 |
ISSN: | 1347-4065 0021-4922 |
Popis: | Radiation response of vertical structure hexagonal (4H) silicon carbide (SiC) power metal–oxide–semiconductor field effect transistors (MOSFETs) was investigated up to 5.8 MGy. The drain current–gate voltage curves for the MOSFETs shifted from positive to negative voltages due to irradiation. However, the drain current–gate voltage curve shifts for the MOSFETs irradiated at 150 °C was smaller than those irradiated at room temperature. Thus, the shift of threshold voltage due to irradiation was suppressed by irradiation at 150 °C. No significant change or slight decrease in subthreshold voltage swing for the MOSFETs irradiated at 150 °C was observed. The value of channel mobility increased due to irradiation, and the increase was enhanced by irradiation at 150 °C comparing to irradiation at RT. |
Databáze: | OpenAIRE |
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