Growth and Characterization of SiC Films by Hot-Wire Chemical Vapor Deposition at Low Substrate Temperature Using SiF4/CH4/H2Mixture

Autor:	Tomohiko Yamakami, Takuya Sakurai, Katsuya Abe, Takahiro Kida, Kiichi Kamimura, Yohei Nagasaka, Rinpei Hayashibe
Rok vydání:	2008
Předmět:	Full width at half maximum Crystallinity Microcrystalline Materials science Physics and Astronomy (miscellaneous) General Engineering Analytical chemistry General Physics and Astronomy Substrate (chemistry) Infrared spectroscopy Chemical vapor deposition Concentration ratio Volumetric flow rate
Zdroj:	Japanese Journal of Applied Physics. 47:566-568
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.47.566
Popis:	Microcrystalline SiC films were grown by hot-wire chemical vapor deposition (HW-CVD) at a low substrate temperature using a SiF4/CH4/H2 mixture, and their structural properties were characterized. Low growth pressure resulted in a narrow full width at half maximum (FWHM) of the Si–C peak in Fourier transform infrared absorption spectroscopy (FT-IR) spectra. The deposition rate and the FWHM value increased with increasing filament temperature. This seemed to be caused by change of the concentration ratio of precursors on the growth surface with increasing filament temperature. Also, the film crystallinity depended on the CH4/SiF4 flow rate ratio, and µc-3C-SiC(111) films were successfully obtained at low substrate temperature of 250 °C.
Databáze:	OpenAIRE
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