InGaP/InGaAs field-effect transistor typed hydrogen sensor
| Autor: | Yu-Chi Chen, Jung-Hui Tsai, Pao-Sheng Lin, Syuan-Hao Liou |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Hydrogen Silicon dioxide General Physics and Astronomy Nanoparticle chemistry.chemical_element Nanotechnology 02 engineering and technology Integrated circuit 01 natural sciences Hydrogen sensor law.invention chemistry.chemical_compound law Etching (microfabrication) 0103 physical sciences 010302 applied physics business.industry Transistor Surfaces and Interfaces General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Surfaces Coatings and Films chemistry Optoelectronics Field-effect transistor 0210 nano-technology business |
| Zdroj: | Applied Surface Science. 432:224-227 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2017.03.246 |
| Popis: | In this article, the Pd-based mixture comprising silicon dioxide (SiO 2 ) is applied as sensing material for the InGaP/InGaAs field-effect transistor typed hydrogen sensor. After wet selectively etching the SiO 2 , the mixture is turned into Pd nanoparticles on an interlayer. Experimental results depict that hydrogen atoms trapped inside the mixture could effectively decrease the gate barrier height and increase the drain current due to the improved sensing properties when Pd nanoparticles were formed by wet etching method. The sensitivity of the gate forward current from air (the reference) to 9800 ppm hydrogen/air environment approaches the high value of 1674. Thus, the studied device shows a good potential for hydrogen sensor and integrated circuit applications. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect