Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxy
| Autor: | A. Lastras-Martínez, A.Yu. Gorbatchev, R. E. Balderas-Navarro, C.I. Medel-Ruiz, V.H. Méndez-García, N. Saucedo-Zeni, Luis Zamora-Peredo |
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| Rok vydání: | 2003 |
| Předmět: |
Photoluminescence
Nanostructure business.industry Chemistry technology industry and agriculture Substrate (electronics) equipment and supplies Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Spectral line Inorganic Chemistry Condensed Matter::Materials Science Optics Quantum dot Dispersion (optics) Materials Chemistry Optoelectronics Reflectance difference spectroscopy business Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. 251:201-207 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/s0022-0248(02)02311-4 |
| Popis: | We investigated the effects induced by Si during self-assembled InAs quantum dots growth by molecular beam epitaxy on GaAs (1 0 0) substrates. The GaAs surface was exposed at high substrate temperatures to Si molecular flux for a few seconds. Samples grown this way were compared with conventionally grown quantum dot samples. Atomic force microscopy (AFM) images showed significant differences between these two types of samples. Smaller size dispersion and an increase of island dimensions were observed for those samples exposed to the Si molecular flux. The photoluminescence spectra revealed a red shift of the quantum dots (QDs) emission. In order to evaluate the optical anisotropy of the QDs, reflectance difference spectroscopy (RDS) measurements were performed. |
| Databáze: | OpenAIRE |
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