Broad‐area high‐power semiconductor optical amplifier

Autor:	Lew Goldberg, Joseph F. Weller
Rok vydání:	1991
Předmět:	Power gain Optical amplifier Materials science Physics and Astronomy (miscellaneous) business.industry Amplifier Energy conversion efficiency Optical communication Power (physics) Semiconductor laser theory Optics Optoelectronics business Quantum well
Zdroj:	Applied Physics Letters. 58:1357-1359
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.104307
Popis:	Operating characteristics of a high‐power 400‐μm‐wide, 500‐μm‐long double‐pass near‐traveling‐wave GaAlAs amplifier are described. In pulsed operation, 2.5 W of diffraction‐limited emission at 820 nm was obtained with an external power gain of 10 dB and 24% electrical to optical conversion efficiency.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::19a01bad0f1651a0c0771d8f9ae57cae https://doi.org/10.1063/1.104307 Zobrazit plný text záznamu