Compact Deep UV System at 222.5 nm Based on Frequency Doubling of GaN Laser Diode Emission
| Autor: | Günther Tränkle, Götz Erbert, Bernd Eppich, Martin Maiwald, André Müller, Bernd Sumpf, Norman Ruhnke |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Laser diode business.industry 02 engineering and technology Radiation 021001 nanoscience & nanotechnology Laser medicine.disease_cause 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Optical pumping Wavelength Narrowband law 0103 physical sciences medicine Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business Ultraviolet Diode |
| Zdroj: | IEEE Photonics Technology Letters. 30:289-292 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/lpt.2017.2787463 |
| Popis: | Laser light sources emitting in the deep ultraviolet wavelength range between 210 and 230 nm are of great interest for spectroscopic applications. Here, a compact DUV diode laser system emitting at a wavelength of 222.5 nm is presented. The system is based on frequency doubling of the laser radiation from a micro-integrated GaN external cavity diode laser module (μECDL) emitting at 445 nm. The μECDL has an optical pump power of 1.4 W with an emission bandwidth of 35 pm. Narrowband laser radiation in continouos wave operation with an output power of 160 μW at 222.5 nm is generated in a single-pass frequency doubling stage with a β-BaB 2 O 4 crystal. The results are suitable to address applications such as spectroscopic investigations of biological samples. The presented concept of a compact and efficient deep ultraviolet laser light source enables the realization of portable systems for which a small footprint and a low power consumption is essential. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|