Emission from rare-earth centers in (ZnTe:Yb):O/GaAs

Autor:	Yu. G. Sadof’ev, E. I. Makhov, N. N. Loiko, V. M. Konnov, A. S. Trushin
Rok vydání:	2002
Předmět:	Materials science Photoluminescence Field (physics) Rare earth Doping Physics::Optics Condensed Matter Physics Epitaxy Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Ion Crystal Condensed Matter::Materials Science Condensed Matter::Superconductivity Atomic physics
Zdroj:	Semiconductors. 36:1215-1220
ISSN:	1090-6479 1063-7826
DOI:	10.1134/1.1521218
Popis:	Layers of Yb-doped ZnTe were grown by molecular-beam epitaxy, and the photoluminescence of ZnTe:Yb structures was studied. It was found that additional doping with O should be performed to activate emission from Yb ions. The necessary conditions for intense emission from Yb3+ ions were determined. Stark splitting of levels of Yb3+ ions in the crystal field was measured experimentally.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::19934c5d11178d0629d0ee1443e09ebe https://doi.org/10.1134/1.1521218 Zobrazit plný text záznamu Plný text ve formátu PDF