Very high‐efficiency semiconductor wafer‐bonded transparent‐substrate (AlxGa1−x)0.5In0.5P/GaP light‐emitting diodes

Autor:	Dennis C Defevere, Robert M Fletcher, M. G. Craford, Dan A. Steigerwald, J. G. Yu, T. D. Osentowski, M. J. Peanasky, C. P. Kuo, K. G. Park, D. A. Vanderwater, Virginia M. Robbins, F. A. Kish, Frank M. Steranka
Rok vydání:	1994
Předmět:	Materials science Physics and Astronomy (miscellaneous) Wafer bonding business.industry Substrate (electronics) Double heterostructure law.invention LED lamp law Optoelectronics Wafer business Luminous efficacy Diode Light-emitting diode
Zdroj:	Applied Physics Letters. 64:2839-2841
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.111442
Popis:	Data are presented demonstrating the operation of transparent‐substrate (TS) (AlxGa1−x)0.5In0.5P/GaP light‐emitting diodes (LEDs) whose efficiency exceeds that afforded by all other current LED technologies in the green to red (560–630 nm) spectral regime. A maximum luminous efficiency of 41.5 lm/W (93.2 lm/A) is realized at λ∼604 nm (20 mA, direct current). The TS (AlxGa1−x)0.5In0.5P/GaP LEDs are fabricated by selectively removing the absorbing n‐type GaAs substrate of a p‐n (AlxGa1−x)0.5In0.5P double heterostructure LED and wafer bonding a ‘‘transparent’’ n‐GaP substrate in its place. The resulting TS (AlxGa1−x)0.5In0.5P/GaP LED lamps exhibit a twofold improvement in light output compared to absorbing‐substrate (AS) (AlxGa1−x)0.5In0.5P/GaAs lamps.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1992ff2e8ec8a9a5f40f35ef4d80a7c7 https://doi.org/10.1063/1.111442 Zobrazit plný text záznamu