Light-emitting diodes and laser diodes based on a Ga1−xInxAs/GaAs1−ySby type II superlattice on InP substrate

Autor:	Matthias Peter, K. Winkler, R. Kiefer, Joachim Wagner, N. Herres, K.H. Bachem, Frank Fuchs
Rok vydání:	1999
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Laser Superluminescent diode Gallium arsenide Blueshift law.invention Semiconductor laser theory chemistry.chemical_compound Optics chemistry law Optoelectronics Spontaneous emission business Diode Light-emitting diode
Zdroj:	Applied Physics Letters. 74:1951-1953
ISSN:	1077-3118 0003-6951
Popis:	We report on the fabrication and characterization of light-emitting diodes (LEDs) and laser diodes with a staggered type II Ga1−xInxAs/GaAs1−ySby superlattice (SL) as the active region. SLs were grown strain compensated on the InP substrate using metalorganic chemical vapor deposition. The LEDs show room-temperature electroluminescence up to 2.14 μm, the index-guided diode lasers displayed cw laser emission at 1.71 μm up to 300 K. The spontaneous emission spectrum was found to show a significant blueshift with increasing injection current density, resulting in shorter laser emission wavelengths for the diode laser than for the LED.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1990f5ccb99f4900a0f71db6be66dada https://doi.org/10.1063/1.123738 Zobrazit plný text záznamu