A 23 GHz VCO with 13% FTR in 22 nm FDSOI
| Autor: | Enno Bohme, Pragoti Pran Bora, Jidan Al-Eryani, Erkan Nevzat Isa, Piyush Kumar, Linus Maurer, David Borggreve |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
business.industry 020208 electrical & electronic engineering Silicon on insulator 020206 networking & telecommunications 02 engineering and technology Inductor Voltage-controlled oscillator Electricity generation CMOS Logic gate 0202 electrical engineering electronic engineering information engineering Optoelectronics Radio frequency business Voltage |
| Zdroj: | 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S). |
| DOI: | 10.1109/s3s46989.2019.9320654 |
| Popis: | This paper presents a low power, Voltage-Controlled-Oscillator (VCO) designed with an output frequency range from 21.5 GHz to 24.5 GHz. The VCO is designed in 22 nm fully depleted Silicon-on-Insulator (FDSOI) CMOS technology. The backgate-bias is used in the optimization of the total power consumption, and the RF output power of the VCO. The frequency tuning ratio (FTR) of the designed oscillator is 13% and power consumption is 1.8 mW with the supply voltage of 550 mV. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|