Temperature Dependence of Raman Scattering in 4H-SiC
| Autor: | Hua Yang Sun, Zhi Ren Qiu, Siou Cheng Lien, Zhe Chuan Feng |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Materials science
Condensed matter physics Phonon Mechanical Engineering Drop (liquid) Analytical chemistry Atmospheric temperature range Condensed Matter Physics symbols.namesake X-ray Raman scattering Mechanics of Materials symbols Coupling (piping) General Materials Science Coherent anti-Stokes Raman spectroscopy Raman spectroscopy Raman scattering |
| Zdroj: | Materials Science Forum. :443-446 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.740-742.443 |
| Popis: | A series of 4H-SiC bulk wafers with different carrier concentrations were studied by Raman scattering in temperature range of 80K to 873K. Different Raman phonon modes of 4H-SiC can be clearly observed. Most Raman peaks of different modes shift to lower frequency with increasing temperature. But abnormal behavior can be observed in the longitudinal optical-plasma coupling mode, which does not decrease in frequency monotonously when temperature increases like other Raman modes. It increases at relatively low temperature and begins to drop after a critical temperature. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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