Inverse Design of InGaN/GaN Quantum Wells

Autor: Wen Liang, Hanlin Fu, Nelson Tansu, Onoriode N. Ogidi-Ekoko
Rok vydání: 2021
Předmět:
Zdroj: 2021 IEEE Photonics Conference (IPC).
DOI: 10.1109/ipc48725.2021.9593011
Popis: We present the inverse design of InGaN/GaN quantum wells for enhanced performance based on a heuristic algorithm. We show that significant improvments in the material gain characteristics and current density of the quantum wells can be achieved by such design approach.
Databáze: OpenAIRE