Inverse Design of InGaN/GaN Quantum Wells
Autor: | Wen Liang, Hanlin Fu, Nelson Tansu, Onoriode N. Ogidi-Ekoko |
---|---|
Rok vydání: | 2021 |
Předmět: | |
Zdroj: | 2021 IEEE Photonics Conference (IPC). |
DOI: | 10.1109/ipc48725.2021.9593011 |
Popis: | We present the inverse design of InGaN/GaN quantum wells for enhanced performance based on a heuristic algorithm. We show that significant improvments in the material gain characteristics and current density of the quantum wells can be achieved by such design approach. |
Databáze: | OpenAIRE |
Externí odkaz: |