| Autor: |
J DENY, Arun Samuel T.S, Darwin S |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
International Journal of Innovative Technology and Exploring Engineering. 8:3457-3460 |
| ISSN: |
2278-3075 |
| DOI: |
10.35940/ijitee.l2602.1081219 |
| Popis: |
In view of the 2-Dimensional game plan of Poisson's condition, a material science-based model of Double Gate Dual Material Junction less (DGDMJNL) Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is made. The advantages of different work capacities connected to the metals in DMDGJNL MOSFET are exhibited and the potential at the inside and qualities of the electric field is uncovered. The proposed model exhibits explicitly demonstrates the effect of the work in electrostatic potential and electric field. It is exhibited that the execution of DMDGJNL MOSFET can be changed by adjusting the channel length extents of control door and shield entryway. The model is assessed by its figured results and those got from a 3D TCAD test system for numerical outcomes. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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