| Autor: |
Assaf Shappir, Ilan Bloom, Boaz Eitan, M. Janai, Eli Lusky, A. Givant |
| Rok vydání: |
2016 |
| Předmět: |
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| DOI: |
10.1016/b978-0-12-803581-8.01768-9 |
| Popis: |
MirrorBit ® technology (also known as NROM) is a unique localized charge-trapping based non-volatile memory device that employs two separate physical and narrow charge packets per transistor, enabling two bits per cell. This technology requires a standard CMOS process with no need for novel materials or exotic processing tools and best addresses the code flash segment. MirrorBit ® technology already qualified to the highest reliability demands in the flash market, including automotive industry. During the recent years MirrorBit ® technology achieved mass production for technology nodes from 220 nm down to 45 nm while the next generation of 32 nm is being developed. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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