Room temperature negative differential resistance in a triple well rectifying resonant tunnelling diode

Autor:	R.S. Mand, A.R. Boothroyd, C. R. Bolognesi
Rok vydání:	1990
Předmět:	Materials science business.industry Negative resistance Resonant-tunneling diode Electrical engineering Tunnel diode Semiconductor quantum wells Optoelectronics Electrical and Electronic Engineering business Current density High current density Quantum well Differential (mathematics)
Zdroj:	Electronics Letters. 26:1163
ISSN:	0013-5194
DOI:	10.1049/el:19900752
Popis:	The first room temperature operation of a triple well rectifying resonant tunnelling diode with a high current density of 8600 A/cm2 is demonstrated. These devices exhibit negative differential resistance in the forward direction only, with peak-to-valley current ratios of 1.3 and 4.0 at 300 and 80 K, respectively.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1973b2dc6ad3fe5427ec93ba208885a1 https://doi.org/10.1049/el:19900752 Zobrazit plný text záznamu