Electric-field-induced combination of Wannier-Stark localization and type-I–type-II crossover in a marginal type-I GaAs/AlAs superlattice
| Autor: | Naoki Ohtani, Hidenori Mimura, Norifumi Egami, Chiaki Domoto, Makoto Hosoda, Masaaki Nakayama, Masanobu Ando |
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| Rok vydání: | 2000 |
| Předmět: | |
| Zdroj: | Physical Review B. 61:7505-7510 |
| ISSN: | 1095-3795 0163-1829 |
| DOI: | 10.1103/physrevb.61.7505 |
| Popis: | We have investigated the influence of carrier transport on photoluminescence (PL) properties in a marginal type-I GaAs/AlAs superlattice whose lowest X state ${(X}_{1})$ is situated in the lowest $\ensuremath{\Gamma}({\ensuremath{\Gamma}}_{1})$ miniband. By applying a bias voltage, the PL signal from the lower edge of the ${\ensuremath{\Gamma}}_{1}$ miniband disappears, while Stark ladder PL is observed from the ${X}_{1}$ state. With a further increase of the bias voltage, the PL signal from the X state disappears, while the PL signal from the ${\ensuremath{\Gamma}}_{1}$ state reappears as a Stark ladder transition. To confirm the electric-field dependence of the ${\ensuremath{\Gamma}}_{1}$- and ${X}_{1}$-related transition energies observed in the PL spectra, the corresponding electroreflectance spectra have been also measured. This PL property can be attributed to competitive carrier transport among the $\ensuremath{\Gamma}$ miniband, the localized $\ensuremath{\Gamma}$ Stark ladder states, and the ${X}_{1}$ state, which results in the transition between type-I and type-II radiative recombination processes. |
| Databáze: | OpenAIRE |
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