Atomic scale study of the chemistry of oxygen, hydrogen and water at SiC surfaces
| Autor: | Fabrice Amy |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Fabrication
Acoustics and Ultrasonics Hydrogen Silicon business.industry chemistry.chemical_element Nanotechnology Condensed Matter Physics Atomic units Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Adsorption Semiconductor chemistry law Metallizing Scanning tunneling microscope business |
| Zdroj: | Journal of Physics D: Applied Physics. 40:6201-6214 |
| ISSN: | 1361-6463 0022-3727 |
| DOI: | 10.1088/0022-3727/40/20/s06 |
| Popis: | Understanding the achievable degree of homogeneity and the effect of surface structure on semiconductor surface chemistry is both academically challenging and of great practical interest to enable fabrication of future generations of devices. In that respect, silicon terminated SiC surfaces such as the cubic 3C?SiC(1?0?0) 3 ? 2 and the hexagonal 6H?SiC(0?0?0?1) 3 ? 3 are of special interest since they give a unique opportunity to investigate the role of surface morphology on oxygen or hydrogen incorporation into the surface. In contrast to silicon, the subsurface structure plays a major role in the reactivity, leading to unexpected consequences such as the initial oxidation starting several atomic planes below the top surface or the surface metallization by atomic hydrogen. |
| Databáze: | OpenAIRE |
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