Engineering laser gain spectrum using electronic vertically coupled InAs-GaAs quantum dots
| Autor: | Chih Ming Lai, Chu-Shou Yang, Gray Lin, R. S. Hsiao, Jenn-Fang Chen, Jim Y. Chi, Tung-Wei Chi, H. Y. Liu, Chiu-Yueh Liang, Jyh-Shyang Wang |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
business.industry Gain Physics::Optics Electroluminescence Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser Atomic and Molecular Physics and Optics Spectral line Electronic Optical and Magnetic Materials Gallium arsenide law.invention chemistry.chemical_compound chemistry Quantum dot Quantum dot laser law Optoelectronics Electrical and Electronic Engineering business Lasing threshold |
| Zdroj: | IEEE Photonics Technology Letters. 17:1590-1592 |
| ISSN: | 1041-1135 |
| DOI: | 10.1109/lpt.2005.851949 |
| Popis: | Continuous large-broad laser gain spectra near 1.3 /spl mu/m are obtained using an active region of electronic vertically coupled (EVC) InAs-GaAs quantum dots (QDs). A wide continuous electroluminescence spectrum, unlike that from conventional uncoupled InAs QD lasers, was obtained around 230 nm (below threshold) with a narrow lasing spectrum. An internal differential quantum efficiency as high as 90%, a maximum measured external differential efficiency of 73% for a stripe-length of L=1 mm, and a threshold current density for zero total optical loss as low as 7 A/cm/sup 2/ per QD layer were achieved. |
| Databáze: | OpenAIRE |
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