Sensitivity of SHG-measurements on oxide deposition process parameters
| Autor: | Josef Stein, Thomas Dekorsy, T. Bobek, Heinrich Kurz |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
In situ
Silicon Chemistry Annealing (metallurgy) Metals and Alloys Analytical chemistry Oxide Second-harmonic generation chemistry.chemical_element Nonlinear optics Surfaces and Interfaces Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Rapid thermal processing Materials Chemistry Optical radiation |
| Zdroj: | Thin Solid Films. 364:95-97 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(99)00899-8 |
| Popis: | We present a comparison of SHG-measurements at the Si/SiO2-interface with electrical characterization to demonstrate the ability of non-linear optical methods for the analysis of interfaces. The Si/SiO2-interfaces under investigation are deposited oxides on Si(001) substrate which were treated in a rapid thermal processing (RTP) chamber. The variation of oxide process parameters, namely the temperature of the post deposition annealing (PDA)-temperature and cooling rates result in a variation of the amplitude of the non-linear optical radiation from the Si/SiO2-interface. Standard electrical characterization of identical samples reveal correlated changes in the defect concentration at and near the interface. These results show that the method of SHG may provide a fast and non-destructive characterization- and process-control-tool for in situ parameter analysis during gate-oxide processing. |
| Databáze: | OpenAIRE |
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