Formation kinetics of various types of hydrogen-related donors in proton-implanted silicon

Autor:	A. N. Petukh, O. A. Dzichkovski, Yu. M. Pokotilo
Rok vydání:	2008
Předmět:	Proton Hydrogen Bistability Silicon Chemistry Kinetics Epitaxial silicon chemistry.chemical_element Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Physical chemistry Electric properties Atomic physics
Zdroj:	Semiconductors. 42:873-875
ISSN:	1090-6479 1063-7826
Popis:	The method of C-V characteristics has been used to study the accumulation kinetics of double and shallow hydrogen-related donors in proton-implanted epitaxial silicon. It is shown that the kinetics corresponds to the first-order reactions. The activation energies ΔE1 = 2.3 eV and ΔE2 = 1.4 eV and the pre-exponential factors τ01 = 9.1 × 10−17 s and τ02 = 4.2 × 10−9 s were determined for both types of the donors, respectively. It was shown that the bistability of the electric properties of silicon is due to the double hydrogen-related donor.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1935b88c4c16cdd9be8228123b3adba6 https://doi.org/10.1134/s1063782608070208 Zobrazit plný text záznamu Plný text ve formátu PDF