Formation kinetics of various types of hydrogen-related donors in proton-implanted silicon

Autor: A. N. Petukh, O. A. Dzichkovski, Yu. M. Pokotilo
Rok vydání: 2008
Předmět:
Zdroj: Semiconductors. 42:873-875
ISSN: 1090-6479
1063-7826
Popis: The method of C-V characteristics has been used to study the accumulation kinetics of double and shallow hydrogen-related donors in proton-implanted epitaxial silicon. It is shown that the kinetics corresponds to the first-order reactions. The activation energies ΔE1 = 2.3 eV and ΔE2 = 1.4 eV and the pre-exponential factors τ01 = 9.1 × 10−17 s and τ02 = 4.2 × 10−9 s were determined for both types of the donors, respectively. It was shown that the bistability of the electric properties of silicon is due to the double hydrogen-related donor.
Databáze: OpenAIRE