Temperature dependent electrical characteristics of rectifying graphitic contacts to p-type silicon
| Autor: | Hiep N. Tran, Phuong Y. Le, Thomas J. Raeber, Anthony S. Holland, Hung V. Pham, Jim G. Partridge, Mohammad Saleh N Alnassar |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Analytical chemistry Oxide Schottky diode 02 engineering and technology P type silicon 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials chemistry.chemical_compound Semiconductor Rectification chemistry 0103 physical sciences Thermal Materials Chemistry Chemical stability Electrical and Electronic Engineering 0210 nano-technology business Deposition (law) |
| Zdroj: | Semiconductor Science and Technology. 34:015003 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/1361-6641/aaef69 |
| Popis: | Graphitic contacts to semiconductors have been shown to provide highly rectifying current-voltage characteristics coupled with high thermal/chemical stability. Energetically deposited graphitic contacts to p-type Si have exhibited rectification ratios (at ± 1.0 V) up to 106:1 and ideality factors approaching unity. Here, we report temperature dependent current-voltage (I-V-T) measurements performed on such devices. The measurements and subsequent analysis show that during energetic carbon deposition, deleterious oxide/contaminants are removed from the Si substrate surface. The Richardson constant of the p-type Si extracted from the I-V-T measurements agrees with the theoretical value, indicating that the surface contaminants are removed without significant damage to the underlying Si. Therefore, by energetic deposition of C on Si, C-Si junctions can be formed with low lateral inhomogeneity and low interface defect density. These attributes of the junctions enable the observed near-ideal Schottky diode characteristics. |
| Databáze: | OpenAIRE |
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