Influence of the nanometer thick interface layer to electrical properties of the 10 nm doped metal oxide high k dielectrics

Autor:	Yue Kuo, F.M. Daby, Jun Yen Tewg, P.C. Liu, Jiang Lu
Rok vydání:	2003
Předmět:	Materials science Silicon business.industry Annealing (metallurgy) Doping Oxide chemistry.chemical_element Dielectric Sputter deposition chemistry.chemical_compound chemistry Optoelectronics Wafer business High-κ dielectric
Zdroj:	Proceedings of the 2nd IEEE Conference on Nanotechnology.
DOI:	10.1109/nano.2002.1032240
Popis:	The 2 nm interface films formed between the 10 nm thin Hf- and Zr-doped tantalum oxide high k films and Si wafer were studied. Physical and chemical properties of the interface layer were investigated with respect to the bulk film preparation conditions. The interface layer properties do not influence the high k film's leakage current but affect the dielectric constant drastically.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::191d9996b89434187b489244409417d6 https://doi.org/10.1109/nano.2002.1032240 Zobrazit plný text záznamu