Multiple-bit storage properties of porphyrin monolayers on SiO2
Autor: | Qiliang Li, Guru Mathur, Jonathan S. Lindsey, Veena Misra, Thomas A. Sorenson, Kannan Muthukumaran, Robert C. Tenent, Srivardhan Gowda, Shyam Surthi, Qian Zhao |
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Rok vydání: | 2004 |
Předmět: | |
Zdroj: | Applied Physics Letters. 85:1829-1831 |
ISSN: | 1077-3118 0003-6951 |
Popis: | Hybrid molecule-silicon capacitors have been fabricated by the self-assembly of a monolayer of porphyrin molecules on a silicon oxide surface. The porphyrin employed [5-(4-dihydroxyphosphorylphenyl)-10,15,20-trimesitylporphinatozinc(II)] attaches to silicon oxide via a phosphonate linkage. Cyclic voltammetry current and capacitance/conductance measurements have been used to characterize the capacitors. The presence of multiple distinct peaks in current density and capacitance/conductance measurements are associated with oxidation and reduction of the molecular monolayer. The charge-storage states of the capacitor indicate applicability for use in multiple-bit memory devices. |
Databáze: | OpenAIRE |
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