Study of Zn diffusion into GaSb from the vapour and liquid phase

Autor:	Andreas W. Bett, S. Keser, O.V. Sulima
Rok vydání:	1997
Předmět:	Inorganic Chemistry Materials science Diffusion transport Phase (matter) Scientific method Diffusion Materials Chemistry Analytical chemistry Liquid phase Good control Surface concentration Condensed Matter Physics Junction depth
Zdroj:	Journal of Crystal Growth. 181:9-16
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(97)00186-3
Popis:	In order to develop a simple and reproducible method to fabricate p-n structures on GaSb for optoelectronic devices, the Zn-diffusion into n-doped GaSb substrates was studied. Two methods of Zn-diffusion were experimentally investigated: (a) diffusion from the vapour phase in a pseudo-closed box system and (b) diffusion from the liquid phase from a Ga-Sb-Zn melt. The process parameters, which provide good control over Zn surface concentration and p-n junction depth, were determined.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1916d0cf7dc6f909225727dbbae6cdf6 https://doi.org/10.1016/s0022-0248(97)00186-3 Zobrazit plný text záznamu Full Text from ScienceDirect