On the modification of the Einstein relation for inversion layers on narrow gap semiconductors in a strong electric field

Autor:	A. K. Chowdhury, A. N. Chakravarti, Kamakhya P. Ghatak, D. R. Choudhury
Rok vydání:	1980
Předmět:	Physics Condensed matter physics Quantum electrodynamics Einstein relation Electric field Electric susceptibility Inversion (meteorology) Narrow-gap semiconductor Electric potential Optical field Condensed Matter Physics Electric flux Electronic Optical and Magnetic Materials
Zdroj:	Physica Status Solidi (a). 59:K211-K215
ISSN:	1521-396X 0031-8965
DOI:	10.1002/pssa.2210590277
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::19100fea4e7f00be498584bd714c46b8 https://doi.org/10.1002/pssa.2210590277 Zobrazit plný text záznamu Plný text