A high performance quantum-well infrared photodetector detecting below 4.1 µm
| Autor: | Alexandru Nedelcu, Lydie Dua, Xavier Marcadet, Vincent Guériaux |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
business.industry
Chemistry Photodetector Condensed Matter Physics Electronic Optical and Magnetic Materials Active layer Optics Absorption band Materials Chemistry Quantum efficiency Infrared detector Electrical and Electronic Engineering Absorption (electromagnetic radiation) Quantum well infrared photodetector business Quantum well |
| Zdroj: | Semiconductor Science and Technology. 24:045006 |
| ISSN: | 1361-6641 0268-1242 |
| Popis: | We demonstrate a high performance quantum-well infrared photodetector on GaAs(0 0 1) substrate, with a spectral response peaked below the carbon dioxide absorption band. The active layer is based on an AlGaAs/AlAs/InGaAs/AlAs/AlGaAs quantum well and designed to achieve a bound to quasi-bound transition. The external quantum efficiency measured at 130 K and –1 V is as high as 21%, leading to peak absorption higher than 28% when an anti-reflection coating is used. The background limited peak detectivity reaches 7 × 1011 Jones (cm Hz1/2 W−1) at 77 K and f/1.6. The detector operates in the background limited regime up to 100 K. Our measured characteristics are key inputs to estimate the performance of a thermal imager and are directly useable by system designers. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|