Silicon-barrier Josephson junctions in coplanar and sandwich configurations

Autor:	R. Ruby, M. Schyfter, T. Van Duzer, J. Maah-Sango, B. T. Ulrich, N. Raley
Rok vydání:	1977
Předmět:	Josephson effect Materials science Silicon business.industry Schottky barrier Doping chemistry.chemical_element Schottky diode Metal–semiconductor junction Electronic Optical and Magnetic Materials Pi Josephson junction chemistry Optoelectronics Electrical and Electronic Engineering business Diode
Zdroj:	IEEE Transactions on Magnetics. 13:862-865
ISSN:	0018-9464
DOI:	10.1109/tmag.1977.1059277
Popis:	Recent considerations on sandwich-type crystalline-silicon-barrier Josephson junctions are given. We show how low-shunt-capacitance electrode configurations can be realized on the thin silicon membranes. As an extension of our work on sandwich-type silicon-barrier devices, we have fabricated junctions with coplanar electrodes separated by a narrow gap on a highly doped silicon surface. These show supercurrents in the range of 1-10 mA for gaps in the range of 0.1-0.3 μm in a strip of 30 μm width and a surface doping of about 2 × 1020cm-3. In both structures, small changes can be made to obtain the behavior of a super-Schottky diode rather than a Josephson junction. These diodes are found to have high sensitivities (S=2000 to 2300 V-1) and can be designed to have low series resistance.
Databáze:	OpenAIRE
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