Multiple-Bit Upset in 130 nm CMOS Technology
Autor: | Ronald D. Schrimpf, Marcus H. Mendenhall, Robert A. Weller, A.D. Tipton, Gyorgy Vizkelethy, Akil K. Sutton, R.M. Diestelhorst, G. Espinel, Paul W. Marshall, John D. Cressler, Jonathan A. Pellish, Brian D. Sierawski, Robert A. Reed |
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Rok vydání: | 2006 |
Předmět: |
Physics
Nuclear and High Energy Physics Proton business.industry Monte Carlo method Electrical engineering Integrated circuit Upset law.invention Nuclear Energy and Engineering CMOS Single event upset law Electronic engineering Static random-access memory Electrical and Electronic Engineering business Energy (signal processing) |
Zdroj: | IEEE Transactions on Nuclear Science. 53:3259-3264 |
ISSN: | 0018-9499 |
DOI: | 10.1109/tns.2006.884789 |
Popis: | The probability of proton-induced multiple-bit upset (MBU) has increased in highly-scaled technologies because device dimensions are small relative to particle event track size. Both proton-induced single event upset (SEU) and MBU responses have been shown to vary with angle and energy for certain technologies. This work analyzes SEU and MBU in a 130 nm CMOS SRAM in which the single-event response shows a strong dependence on the angle of proton incidence. Current proton testing methods do not account for device orientation relative to the proton beam and, subsequently, error rate prediction assumes no angular dependencies. Proton-induced MBU is expected to increase as integrated circuits continue to scale into the deep sub-micron regime. Consequently, the application of current testing methods will lead to an incorrect prediction of error rates |
Databáze: | OpenAIRE |
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